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FF200R12KE3B2HOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 295A 1050W
FF200R12KE3B2HOSA1 Images
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Product Specifications:
MfrPart.: FF200R12KE3B2HOSA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 295A 1050WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: ActiveIGBTType: -Configuration: Half BridgeVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 295 APower-Max: 1050 WVce(on)(Max)@VgeIc: 2.15V @ 15V, 200ACurrent-CollectorCutoff(Max): 5 mAInputCapacitance(Cies)@Vce: 14 nF @ 25 VInput: StandardNTCThermistor: NoOperatingTemperature: -40°C ~ 125°CMountingType: Chassis MountPackage/Case: ModuleFF200R12KE3B2HOSA1 | Infineon | NHE Electronics
FF200R12KE3B2HOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.