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FF200R12KT3EHOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MODULE 1200V 1050W
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Product Specifications:
MfrPart.: FF200R12KT3EHOSA1Mfr: Infineon TechnologiesDescription: IGBT MODULE 1200V 1050WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BulkSeries: -PartStatus: ActiveIGBTType: -Configuration: 2 IndependentVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): -Power-Max: 1050 WVce(on)(Max)@VgeIc: 2.15V @ 15V, 200ACurrent-CollectorCutoff(Max): 5 mAInputCapacitance(Cies)@Vce: 14 nF @ 25 VInput: StandardNTCThermistor: NoOperatingTemperature: -40°C ~ 125°CMountingType: Chassis MountPackage/Case: ModuleFF200R12KT3EHOSA1 | Infineon | NHE Electronics
FF200R12KT3EHOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.