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FF900R12ME7B11BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 900A
FF900R12ME7B11BOSA1 Images
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Product Specifications:
MfrPart.: FF900R12ME7B11BOSA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 900AProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: EconoDUAL™ 3PartStatus: ActiveIGBTType: Trench Field StopConfiguration: 2 IndependentVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 900 APower-Max: 20 mWVce(on)(Max)@VgeIc: 1.8V @ 15V, 900ACurrent-CollectorCutoff(Max): 10 µAInputCapacitance(Cies)@Vce: 122 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 175°C (TJ)MountingType: Chassis MountPackage/Case: ModuleFF900R12ME7B11BOSA1 | Infineon | NHE Electronics
FF900R12ME7B11BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.