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FP100R07N3E4B11BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 650V 100A 335W
FP100R07N3E4B11BOSA1 Images
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Product Specifications：
MfrPart.: FP100R07N3E4B11BOSA1Mfr: Infineon TechnologiesDescription: IGBT MOD 650V 100A 335WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BulkSeries: -PartStatus: ActiveIGBTType: Trench Field StopConfiguration: Three Phase InverterVoltage-CollectorEmitterBreakdown(Max): 650 VCurrent-Collector(Ic)(Max): 100 APower-Max: 335 WVce(on)(Max)@VgeIc: 1.95V @ 15V, 100ACurrent-CollectorCutoff(Max): 1 mAInputCapacitance(Cies)@Vce: 6.2 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleFP100R07N3E4B11BOSA1 | Infineon | NHE Electronics
FP100R07N3E4B11BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
