Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
FP10R12W1T4B3BOMA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 20A 105W
FP10R12W1T4B3BOMA1 Images
For
Infineon, you may also be interested in the following:
MOSFET N-CH 600V 120MA SOT223-4
DIODE SWITCHING 600V WAFER
Product Specifications:
MfrPart.: FP10R12W1T4B3BOMA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 20A 105WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BulkSeries: -PartStatus: ActiveIGBTType: Trench Field StopConfiguration: Three Phase InverterVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 20 APower-Max: 105 WVce(on)(Max)@VgeIc: 2.25V @ 15V, 10ACurrent-CollectorCutoff(Max): 1 mAInputCapacitance(Cies)@Vce: 600 pF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleFP10R12W1T4B3BOMA1 | Infineon | NHE Electronics
FP10R12W1T4B3BOMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.