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FP35R12KT4B11BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 35A 210W
FP35R12KT4B11BOSA1 Images
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Product Specifications:
MfrPart.: FP35R12KT4B11BOSA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 35A 210WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: ActiveIGBTType: Trench Field StopConfiguration: Three Phase InverterVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 35 APower-Max: 210 WVce(on)(Max)@VgeIc: 2.15V @ 15V, 35ACurrent-CollectorCutoff(Max): 1 mAInputCapacitance(Cies)@Vce: 2 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleFP35R12KT4B11BOSA1 | Infineon | NHE Electronics
FP35R12KT4B11BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.