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FP35R12W2T7B11BOMA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, LOW POWER EASY
FP35R12W2T7B11BOMA1 Images
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Product Specifications：
MfrPart.: FP35R12W2T7B11BOMA1Mfr: Infineon TechnologiesDescription: LOW POWER EASYProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: EasyPIM™PartStatus: ActiveIGBTType: Trench Field StopConfiguration: Three Phase InverterVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 35 APower-Max: 20 mWVce(on)(Max)@VgeIc: 1.6V @ 15V, 35ACurrent-CollectorCutoff(Max): 5.8 µAInputCapacitance(Cies)@Vce: 6.62 nF @ 25 VInput: Three Phase Bridge RectifierNTCThermistor: YesOperatingTemperature: -40°C ~ 175°C (TJ)MountingType: Chassis MountPackage/Case: ModuleFP35R12W2T7B11BOMA1 | Infineon | NHE Electronics
FP35R12W2T7B11BOMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
