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FP50R07N2E4B11BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MODULE 650V 70A
FP50R07N2E4B11BOSA1 Images
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Product Specifications：
MfrPart.: FP50R07N2E4B11BOSA1Mfr: Infineon TechnologiesDescription: IGBT MODULE 650V 70AProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: BulkSeries: -PartStatus: ActiveIGBTType: Trench Field StopConfiguration: Three Phase InverterVoltage-CollectorEmitterBreakdown(Max): 650 VCurrent-Collector(Ic)(Max): 70 APower-Max: -Vce(on)(Max)@VgeIc: 1.95V @ 15V, 50ACurrent-CollectorCutoff(Max): 1 mAInputCapacitance(Cies)@Vce: 3.1 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleFP50R07N2E4B11BOSA1 | Infineon | NHE Electronics
FP50R07N2E4B11BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
