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    FS100R07N2E4B11BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 650V 125A 20MW
    FS100R07N2E4B11BOSA1 Images
    FS100R07N2E4B11BOSA1 Images
    Product Attributes：
  • Part Number: FS100R07N2E4B11BOSA1
  • Manufacturer: Infineon
  • Description: IGBT MOD 650V 125A 20MW
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
  • FS100R07N2E4B11BOSA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: FS100R07N2E4B11BOSA1
  • Mfr: Infineon Technologies
  • Description: IGBT MOD 650V 125A 20MW
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Modules
  • Package: Bulk
  • Series: -
  • PartStatus: Active
  • IGBTType: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage-CollectorEmitterBreakdown(Max): 650 V
  • Current-Collector(Ic)(Max): 125 A
  • Power-Max: 20 mW
  • Vce(on)(Max)@VgeIc: 1.95V @ 15V, 100A
  • Current-CollectorCutoff(Max): 1 mA
  • InputCapacitance(Cies)@Vce: 6.2 nF @ 25 V
  • Input: Standard
  • NTCThermistor: Yes
  • OperatingTemperature: -40°C ~ 150°C
  • MountingType: Chassis Mount
  • Package/Case: Module
  • FS100R07N2E4B11BOSA1 | Infineon | NHE Electronics
    • FS100R07N2E4B11BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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