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FS35R12W1T4B11BOMA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 65A 225W
FS35R12W1T4B11BOMA1 Images
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Product Specifications:
MfrPart.: FS35R12W1T4B11BOMA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 65A 225WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: ActiveIGBTType: Trench Field StopConfiguration: Three Phase InverterVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 65 APower-Max: 225 WVce(on)(Max)@VgeIc: 2.25V @ 15V, 35ACurrent-CollectorCutoff(Max): 1 mAInputCapacitance(Cies)@Vce: 2 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleFS35R12W1T4B11BOMA1 | Infineon | NHE Electronics
FS35R12W1T4B11BOMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.