Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
FS50R12W2T4B11BOMA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 83A 335W
FS50R12W2T4B11BOMA1 Images
For
Infineon, you may also be interested in the following:
IC GATE DRVR HALF-BRIDGE 8SOIC
BIPOLAR DIGITAL TRANSISTOR
TRANS PNP 40V 200MA SOT23-3
Product Specifications:
MfrPart.: FS50R12W2T4B11BOMA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 83A 335WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: ActiveIGBTType: Trench Field StopConfiguration: Three Phase InverterVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 83 APower-Max: 335 WVce(on)(Max)@VgeIc: 2.15V @ 15V, 50ACurrent-CollectorCutoff(Max): 1 mAInputCapacitance(Cies)@Vce: 2.8 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleFS50R12W2T4B11BOMA1 | Infineon | NHE Electronics
FS50R12W2T4B11BOMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.