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FS75R07N2E4B11BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MODULE 650V 75A 250W
FS75R07N2E4B11BOSA1 Images
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Product Specifications:
MfrPart.: FS75R07N2E4B11BOSA1Mfr: Infineon TechnologiesDescription: IGBT MODULE 650V 75A 250WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: ActiveIGBTType: Trench Field StopConfiguration: Three Phase InverterVoltage-CollectorEmitterBreakdown(Max): 650 VCurrent-Collector(Ic)(Max): 75 APower-Max: 250 WVce(on)(Max)@VgeIc: 1.95V @ 15V, 75ACurrent-CollectorCutoff(Max): 1 mAInputCapacitance(Cies)@Vce: 4.6 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleFS75R07N2E4B11BOSA1 | Infineon | NHE Electronics
FS75R07N2E4B11BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.