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FZ1800R12HE4B9HOSA2, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MODULE 1200V 2735A
FZ1800R12HE4B9HOSA2 Images
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Product Specifications:
MfrPart.: FZ1800R12HE4B9HOSA2Mfr: Infineon TechnologiesDescription: IGBT MODULE 1200V 2735AProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: ActiveIGBTType: Trench Field StopConfiguration: Single SwitchVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 2735 APower-Max: 11000 WVce(on)(Max)@VgeIc: 2.1V @ 15V, 1800ACurrent-CollectorCutoff(Max): 5 mAInputCapacitance(Cies)@Vce: 110 nF @ 25 VInput: StandardNTCThermistor: NoOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleFZ1800R12HE4B9HOSA2 | Infineon | NHE Electronics
FZ1800R12HE4B9HOSA2 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.