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IFS75B12N3E4B31BOSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Modules, IGBT MOD 1200V 150A 385W
IFS75B12N3E4B31BOSA1 Images
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Product Specifications:
MfrPart.: IFS75B12N3E4B31BOSA1Mfr: Infineon TechnologiesDescription: IGBT MOD 1200V 150A 385WProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - ModulesPackage: TraySeries: -PartStatus: ActiveIGBTType: Trench Field StopConfiguration: Full BridgeVoltage-CollectorEmitterBreakdown(Max): 1200 VCurrent-Collector(Ic)(Max): 150 APower-Max: 385 WVce(on)(Max)@VgeIc: 2.15V @ 15V, 75ACurrent-CollectorCutoff(Max): 1 mAInputCapacitance(Cies)@Vce: 4.3 nF @ 25 VInput: StandardNTCThermistor: YesOperatingTemperature: -40°C ~ 150°CMountingType: Chassis MountPackage/Case: ModuleIFS75B12N3E4B31BOSA1 | Infineon | NHE Electronics
IFS75B12N3E4B31BOSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.