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IGT60R070D1E8220ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, GAN HV
IGT60R070D1E8220ATMA1 Images
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Product Specifications：
MfrPart.: IGT60R070D1E8220ATMA1Mfr: Infineon TechnologiesDescription: GAN HVProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: BulkSeries: CoolGaN™PartStatus: ObsoleteFETType: N-ChannelTechnology: GaNFET (Gallium Nitride)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 31A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): -RdsOn(Max)@IdVgs: -Vgs(th)(Max)@Id: 1.6V @ 2.6mAGateCharge(Qg)(Max)@Vgs: -Vgs(Max): -10VInputCapacitance(Ciss)(Max)@Vds: 380 pF @ 400 VFETFeature: -PowerDissipation(Max): 125W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-HSOF-8-3IGT60R070D1E8220ATMA1 | Infineon | NHE Electronics
IGT60R070D1E8220ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
