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IGT60R190D1SATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, GANFET N-CH 600V 12.5A 8HSOF
Product Attributes：
Part Number: IGT60R190D1SATMA1
Manufacturer: Infineon
Description: GANFET N-CH 600V 12.5A 8HSOF
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IGT60R190D1SATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IGT60R190D1SATMA1Mfr: Infineon TechnologiesDescription: GANFET N-CH 600V 12.5A 8HSOFProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: CoolGaN™PartStatus: ObsoleteFETType: N-ChannelTechnology: GaNFET (Gallium Nitride)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 12.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): -RdsOn(Max)@IdVgs: -Vgs(th)(Max)@Id: 1.6V @ 960µAGateCharge(Qg)(Max)@Vgs: -Vgs(Max): -10VInputCapacitance(Ciss)(Max)@Vds: 157 pF @ 400 VFETFeature: -PowerDissipation(Max): 55.5W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-HSOF-8-3IGT60R190D1SATMA1 | Infineon | NHE Electronics
IGT60R190D1SATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
