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    IGW03N120H2FKSA1, Infineon, Discrete Semiconductor Products~Transistors - IGBTs - Single, INSULATED GATE BIPOLAR TRANSISTO
    IGW03N120H2FKSA1 Images
    IGW03N120H2FKSA1 Images
    Product Attributes：
  • Part Number: IGW03N120H2FKSA1
  • Manufacturer: Infineon
  • Description: INSULATED GATE BIPOLAR TRANSISTO
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • IGW03N120H2FKSA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: IGW03N120H2FKSA1
  • Mfr: Infineon Technologies
  • Description: INSULATED GATE BIPOLAR TRANSISTO
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • Package: Bulk
  • Series: -
  • PartStatus: Active
  • IGBTType: -
  • Voltage-CollectorEmitterBreakdown(Max): 1.2 kV
  • Current-Collector(Ic)(Max): 9.6 A
  • Current-CollectorPulsed(Icm): 9.9 A
  • Vce(on)(Max)@VgeIc: 2.8V @ 15V, 3A
  • Power-Max: 62.5 W
  • SwitchingEnergy: 290µJ
  • InputType: Standard
  • GateCharge: 22 nC
  • Td(on/off)@25°C: 9.2ns/281ns
  • TestCondition: 800V, 3A, 82Ohm, 15V
  • ReverseRecoveryTime(trr): -
  • OperatingTemperature: -40°C ~ 150°C (TJ)
  • MountingType: Through Hole
  • Package/Case: TO-247-3
  • IGW03N120H2FKSA1 | Infineon | NHE Electronics
    • IGW03N120H2FKSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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