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IMBG120R090M1HXTMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, TRANS SJT N-CH 1.2KV 26A TO263
IMBG120R090M1HXTMA1 Images
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Product Specifications：
MfrPart.: IMBG120R090M1HXTMA1Mfr: Infineon TechnologiesDescription: TRANS SJT N-CH 1.2KV 26A TO263Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: CoolSiC™PartStatus: ActiveFETType: N-ChannelTechnology: SiC (Silicon Carbide Junction Transistor)DraintoSourceVoltage(Vdss): 1.2 kVCurrent-ContinuousDrain(Id)@25°C: 26A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): -RdsOn(Max)@IdVgs: 125mOhm @ 8.5A, 18VVgs(th)(Max)@Id: 5.7V @ 3.7mAGateCharge(Qg)(Max)@Vgs: 23 nC @ 18 VVgs(Max): +18V, -15VInputCapacitance(Ciss)(Max)@Vds: 763 pF @ 800 VFETFeature: StandardPowerDissipation(Max): 136W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-7-12IMBG120R090M1HXTMA1 | Infineon | NHE Electronics
IMBG120R090M1HXTMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
