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    IMW120R090M1HXKSA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, SICFET N-CH 1.2KV 26A TO247-3
    IMW120R090M1HXKSA1 Images
    IMW120R090M1HXKSA1 Images
    Product Attributes：
  • Part Number: IMW120R090M1HXKSA1
  • Manufacturer: Infineon
  • Description: SICFET N-CH 1.2KV 26A TO247-3
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • IMW120R090M1HXKSA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: IMW120R090M1HXKSA1
  • Mfr: Infineon Technologies
  • Description: SICFET N-CH 1.2KV 26A TO247-3
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tube
  • Series: CoolSiC™
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • DraintoSourceVoltage(Vdss): 1.2 kV
  • Current-ContinuousDrain(Id)@25°C: 26A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 15V, 18V
  • RdsOn(Max)@IdVgs: 117mOhm @ 8.5A, 18V
  • Vgs(th)(Max)@Id: 5.7V @ 3.7mA
  • GateCharge(Qg)(Max)@Vgs: 21 nC @ 18 V
  • Vgs(Max): +23V, -7V
  • InputCapacitance(Ciss)(Max)@Vds: 707 pF @ 800 V
  • FETFeature: -
  • PowerDissipation(Max): 115W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Through Hole
  • SupplierDevicePackage: PG-TO247-3-41
  • IMW120R090M1HXKSA1 | Infineon | NHE Electronics
    • IMW120R090M1HXKSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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