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IMW120R350M1HXKSA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, SICFET N-CH 1.2KV 4.7A TO247-3
IMW120R350M1HXKSA1 Images
Product Attributes：
Part Number: IMW120R350M1HXKSA1
Manufacturer: Infineon
Description: SICFET N-CH 1.2KV 4.7A TO247-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IMW120R350M1HXKSA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IMW120R350M1HXKSA1Mfr: Infineon TechnologiesDescription: SICFET N-CH 1.2KV 4.7A TO247-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: CoolSiC™PartStatus: ActiveFETType: N-ChannelTechnology: SiCFET (Silicon Carbide)DraintoSourceVoltage(Vdss): 1.2 kVCurrent-ContinuousDrain(Id)@25°C: 4.7A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 15V, 18VRdsOn(Max)@IdVgs: 455mOhm @ 2A, 18VVgs(th)(Max)@Id: 5.7V @ 1mAGateCharge(Qg)(Max)@Vgs: 5.3 nC @ 18 VVgs(Max): +23V, -7VInputCapacitance(Ciss)(Max)@Vds: 182 pF @ 800 VFETFeature: -PowerDissipation(Max): 60W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Through HoleSupplierDevicePackage: PG-TO247-3-41IMW120R350M1HXKSA1 | Infineon | NHE Electronics
IMW120R350M1HXKSA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
