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IPB009N03LGATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 180A TO263-7
Product Attributes：
Part Number: IPB009N03LGATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 30V 180A TO263-7
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB009N03LGATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPB009N03LGATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 30V 180A TO263-7Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: Not For New DesignsFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 180A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 0.95mOhm @ 100A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 227 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 25000 pF @ 15 VFETFeature: -PowerDissipation(Max): 250W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-7-3IPB009N03LGATMA1 | Infineon | NHE Electronics
IPB009N03LGATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
