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IPB017N08N5ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 80V 120A D2PAK
Product Attributes：
Part Number: IPB017N08N5ATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 80V 120A D2PAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB017N08N5ATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPB017N08N5ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 80V 120A D2PAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 120A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 1.7mOhm @ 100A, 10VVgs(th)(Max)@Id: 3.8V @ 280µAGateCharge(Qg)(Max)@Vgs: 223 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 16900 pF @ 40 VFETFeature: -PowerDissipation(Max): 375W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3IPB017N08N5ATMA1 | Infineon | NHE Electronics
IPB017N08N5ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
