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IPB017N10N5LFATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 180A TO263-7
IPB017N10N5LFATMA1 Images
Product Attributes：
Part Number: IPB017N10N5LFATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 100V 180A TO263-7
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB017N10N5LFATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPB017N10N5LFATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 100V 180A TO263-7Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™-5PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 180A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 1.7mOhm @ 100A, 10VVgs(th)(Max)@Id: 4.1V @ 270µAGateCharge(Qg)(Max)@Vgs: 195 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 840 pF @ 50 VFETFeature: -PowerDissipation(Max): 313W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-7IPB017N10N5LFATMA1 | Infineon | NHE Electronics
IPB017N10N5LFATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
