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    IPB019N08N3GATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 80V 180A TO263-7
    IPB019N08N3GATMA1 Images
    IPB019N08N3GATMA1 Images
    Product Attributes：
  • Part Number: IPB019N08N3GATMA1
  • Manufacturer: Infineon
  • Description: MOSFET N-CH 80V 180A TO263-7
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • IPB019N08N3GATMA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: IPB019N08N3GATMA1
  • Mfr: Infineon Technologies
  • Description: MOSFET N-CH 80V 180A TO263-7
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
  • Series: OptiMOS™
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 80 V
  • Current-ContinuousDrain(Id)@25°C: 180A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10V
  • RdsOn(Max)@IdVgs: 1.9mOhm @ 100A, 10V
  • Vgs(th)(Max)@Id: 3.5V @ 270µA
  • GateCharge(Qg)(Max)@Vgs: 206 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 14200 pF @ 40 V
  • FETFeature: -
  • PowerDissipation(Max): 300W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PG-TO263-7
  • IPB019N08N3GATMA1 | Infineon | NHE Electronics
    • IPB019N08N3GATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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