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IPB029N06N3GATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 120A D2PAK
Product Attributes：
Part Number: IPB029N06N3GATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 60V 120A D2PAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB029N06N3GATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPB029N06N3GATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 60V 120A D2PAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 120A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 2.9mOhm @ 100A, 10VVgs(th)(Max)@Id: 4V @ 118µAGateCharge(Qg)(Max)@Vgs: 165 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 13000 pF @ 30 VFETFeature: -PowerDissipation(Max): 188W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3IPB029N06N3GATMA1 | Infineon | NHE Electronics
IPB029N06N3GATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
