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    IPB042N10N3GE8187ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 100A D2PAK
    IPB042N10N3GE8187ATMA1 Images
    IPB042N10N3GE8187ATMA1 Images
    Product Attributes：
  • Part Number: IPB042N10N3GE8187ATMA1
  • Manufacturer: Infineon
  • Description: MOSFET N-CH 100V 100A D2PAK
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • IPB042N10N3GE8187ATMA1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: IPB042N10N3GE8187ATMA1
  • Mfr: Infineon Technologies
  • Description: MOSFET N-CH 100V 100A D2PAK
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR)
  • Series: OptiMOS™
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 100 V
  • Current-ContinuousDrain(Id)@25°C: 100A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10V
  • RdsOn(Max)@IdVgs: 4.2mOhm @ 50A, 10V
  • Vgs(th)(Max)@Id: 3.5V @ 150µA
  • GateCharge(Qg)(Max)@Vgs: 117 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 8410 pF @ 50 V
  • FETFeature: -
  • PowerDissipation(Max): 214W (Tc)
  • OperatingTemperature: -55°C ~ 175°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PG-TO263-3
  • IPB042N10N3GE8187ATMA1 | Infineon | NHE Electronics
    • IPB042N10N3GE8187ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
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