Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
IPB048N06LGATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 100A D2PAK
Product Attributes：
Part Number: IPB048N06LGATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 60V 100A D2PAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB048N06LGATMA1 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Infineon, you may also be interested in the following:
IC MCU 8BIT FFMC-8L-0.5 64LQFP
MOSFET P-CH 60V 8.8A TO220-3
IGBT 1200V 45A 200W TO247AC
RF TRANS NPN 15V 5GHZ SOT23-3
UT-REALOS/M3 FOR EWARM (KERNEL)
MOSFET N-CH 100V 17A TO220AB
Product Specifications：
MfrPart.: IPB048N06LGATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 60V 100A D2PAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 100A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 4.4mOhm @ 100A, 10VVgs(th)(Max)@Id: 2V @ 270µAGateCharge(Qg)(Max)@Vgs: 225 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 7600 pF @ 30 VFETFeature: -PowerDissipation(Max): 300W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3IPB048N06LGATMA1 | Infineon | NHE Electronics
IPB048N06LGATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
