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IPB06CN10N G, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 100A D2PAK
Product Attributes：
Part Number: IPB06CN10N G
Manufacturer: Infineon
Description: MOSFET N-CH 100V 100A D2PAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB06CN10N G Datasheet (PDF)
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Product Specifications：
MfrPart.: IPB06CN10N GMfr: Infineon TechnologiesDescription: MOSFET N-CH 100V 100A D2PAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: OptiMOS™PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 100A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 6.2mOhm @ 100A, 10VVgs(th)(Max)@Id: 4V @ 180µAGateCharge(Qg)(Max)@Vgs: 139 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 9200 pF @ 50 VFETFeature: -PowerDissipation(Max): 214W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3IPB06CN10N G | Infineon | NHE Electronics
IPB06CN10N G were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
