Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
IPB083N10N3GATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 80A D2PAK
Product Attributes：
Part Number: IPB083N10N3GATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 100V 80A D2PAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB083N10N3GATMA1 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Infineon, you may also be interested in the following:
IC MCU 32BIT 512KB FLSH 112PFBGA
MOSFET N-CH 40V 195A TO220AB
IC SRAM 18MBIT PARALLEL 100TQFP
IC MCU 16BIT 128KB FLASH 64LQFP
Product Specifications：
MfrPart.: IPB083N10N3GATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 100V 80A D2PAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 80A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 8.3mOhm @ 73A, 10VVgs(th)(Max)@Id: 3.5V @ 75µAGateCharge(Qg)(Max)@Vgs: 55 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3980 pF @ 50 VFETFeature: -PowerDissipation(Max): 125W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3IPB083N10N3GATMA1 | Infineon | NHE Electronics
IPB083N10N3GATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
