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IPB110N20N3LFATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 200V 88A TO263-3
IPB110N20N3LFATMA1 Images
Product Attributes:
Part Number: IPB110N20N3LFATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 200V 88A TO263-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB110N20N3LFATMA1 Datasheet (PDF)
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Product Specifications:
MfrPart.: IPB110N20N3LFATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 200V 88A TO263-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™ 3PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 200 VCurrent-ContinuousDrain(Id)@25°C: 88A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 11mOhm @ 88A, 10VVgs(th)(Max)@Id: 4.2V @ 260µAGateCharge(Qg)(Max)@Vgs: 76 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 650 pF @ 100 VFETFeature: -PowerDissipation(Max): 250W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3IPB110N20N3LFATMA1 | Infineon | NHE Electronics
IPB110N20N3LFATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.