Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
IPB120N06S4H1ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 120A TO263-3
IPB120N06S4H1ATMA1 Images
Product Attributes：
Part Number: IPB120N06S4H1ATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 60V 120A TO263-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB120N06S4H1ATMA1 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Infineon, you may also be interested in the following:
160A, 40V N-CHANNEL, MOSFET
IGBT TRENCH 600V 8A TO251-3
IC MCU 8BIT 32KB MROM 80LQFP
IC MCU 8BIT 4KB MROM 48LQFP
MOSFET 2P-CH 30V 8.2A 8DSO
Product Specifications：
MfrPart.: IPB120N06S4H1ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 60V 120A TO263-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: OptiMOS™PartStatus: Discontinued at FETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 120A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 2.1mOhm @ 100A, 10VVgs(th)(Max)@Id: 4V @ 200µAGateCharge(Qg)(Max)@Vgs: 270 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 21900 pF @ 25 VFETFeature: -PowerDissipation(Max): 250W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3-2IPB120N06S4H1ATMA1 | Infineon | NHE Electronics
IPB120N06S4H1ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
