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IPB12CNE8N G, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 85V 67A D2PAK
Product Attributes：
Part Number: IPB12CNE8N G
Manufacturer: Infineon
Description: MOSFET N-CH 85V 67A D2PAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB12CNE8N G Datasheet (PDF)
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Product Specifications：
MfrPart.: IPB12CNE8N GMfr: Infineon TechnologiesDescription: MOSFET N-CH 85V 67A D2PAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: OptiMOS™PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 85 VCurrent-ContinuousDrain(Id)@25°C: 67A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 12.9mOhm @ 67A, 10VVgs(th)(Max)@Id: 4V @ 83µAGateCharge(Qg)(Max)@Vgs: 64 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 4340 pF @ 40 VFETFeature: -PowerDissipation(Max): 125W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3IPB12CNE8N G | Infineon | NHE Electronics
IPB12CNE8N G were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
