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IPB180N03S4LH0ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 180A TO263-7
IPB180N03S4LH0ATMA1 Images
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Product Specifications：
MfrPart.: IPB180N03S4LH0ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 30V 180A TO263-7Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 180A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 0.95mOhm @ 100A, 10VVgs(th)(Max)@Id: 2.2V @ 200µAGateCharge(Qg)(Max)@Vgs: 300 nC @ 10 VVgs(Max): ±16VInputCapacitance(Ciss)(Max)@Vds: 23000 pF @ 25 VFETFeature: -PowerDissipation(Max): 250W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-7-3IPB180N03S4LH0ATMA1 | Infineon | NHE Electronics
IPB180N03S4LH0ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
