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IPB180N10S403ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 180A TO263-7
IPB180N10S403ATMA1 Images
Product Attributes:
Part Number: IPB180N10S403ATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 100V 180A TO263-7
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB180N10S403ATMA1 Datasheet (PDF)
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Product Specifications:
MfrPart.: IPB180N10S403ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 100V 180A TO263-7Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: Automotive, AEC-Q101, OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 180A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 3.3mOhm @ 100A, 10VVgs(th)(Max)@Id: 3.5V @ 180µAGateCharge(Qg)(Max)@Vgs: 140 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 10120 pF @ 25 VFETFeature: -PowerDissipation(Max): 250W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-7-3IPB180N10S403ATMA1 | Infineon | NHE Electronics
IPB180N10S403ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.