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IPB26CN10NGATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 35A D2PAK
Product Attributes：
Part Number: IPB26CN10NGATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 100V 35A D2PAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB26CN10NGATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPB26CN10NGATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 100V 35A D2PAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: OptiMOS™PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 35A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 26mOhm @ 35A, 10VVgs(th)(Max)@Id: 4V @ 39µAGateCharge(Qg)(Max)@Vgs: 31 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2070 pF @ 50 VFETFeature: -PowerDissipation(Max): 71W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3IPB26CN10NGATMA1 | Infineon | NHE Electronics
IPB26CN10NGATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
