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IPB35N12S3L26ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 120V 35A TO263-3-2
IPB35N12S3L26ATMA1 Images
Product Attributes:
Part Number: IPB35N12S3L26ATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 120V 35A TO263-3-2
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB35N12S3L26ATMA1 Datasheet (PDF)
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Product Specifications:
MfrPart.: IPB35N12S3L26ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 120V 35A TO263-3-2Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: BulkSeries: Automotive, AEC-Q101, OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 120 VCurrent-ContinuousDrain(Id)@25°C: 35A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): -RdsOn(Max)@IdVgs: 26.3mOhm @ 35A, 10VVgs(th)(Max)@Id: 2.4V @ 39µAGateCharge(Qg)(Max)@Vgs: 30 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2700 pF @ 25 VFETFeature: -PowerDissipation(Max): 71W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3-2IPB35N12S3L26ATMA1 | Infineon | NHE Electronics
IPB35N12S3L26ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.