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IPB60R099C6ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 37.9A D2PAK
Product Attributes：
Part Number: IPB60R099C6ATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 600V 37.9A D2PAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPB60R099C6ATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPB60R099C6ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 600V 37.9A D2PAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: CoolMOS™PartStatus: Not For New DesignsFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 37.9A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 99mOhm @ 18.1A, 10VVgs(th)(Max)@Id: 3.5V @ 1.21mAGateCharge(Qg)(Max)@Vgs: 119 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2660 pF @ 100 VFETFeature: -PowerDissipation(Max): 278W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3IPB60R099C6ATMA1 | Infineon | NHE Electronics
IPB60R099C6ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
