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IPB65R660CFDAATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 650V 6A D2PAK
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Product Specifications：
MfrPart.: IPB65R660CFDAATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 650V 6A D2PAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT),BulkSeries: Automotive, AEC-Q101, CoolMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 650 VCurrent-ContinuousDrain(Id)@25°C: 6A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 660mOhm @ 3.2A, 10VVgs(th)(Max)@Id: 4.5V @ 200µAGateCharge(Qg)(Max)@Vgs: 20 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 543 pF @ 100 VFETFeature: -PowerDissipation(Max): 62.5W (Tc)OperatingTemperature: -40°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3IPB65R660CFDAATMA1 | Infineon | NHE Electronics
IPB65R660CFDAATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
