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IPB80N06S2L11ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 55V 80A TO263-3
IPB80N06S2L11ATMA1 Images
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Product Specifications：
MfrPart.: IPB80N06S2L11ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 55V 80A TO263-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: OptiMOS™PartStatus: Discontinued at FETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 55 VCurrent-ContinuousDrain(Id)@25°C: 80A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 10.7mOhm @ 60A, 10VVgs(th)(Max)@Id: 2V @ 93µAGateCharge(Qg)(Max)@Vgs: 80 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2075 pF @ 25 VFETFeature: -PowerDissipation(Max): 158W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3-2IPB80N06S2L11ATMA1 | Infineon | NHE Electronics
IPB80N06S2L11ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
