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IPB80N06S4L07ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 80A TO263-3
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Product Specifications：
MfrPart.: IPB80N06S4L07ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 60V 80A TO263-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: BulkSeries: OptiMOS™PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 80A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 6.4mOhm @ 80A, 10VVgs(th)(Max)@Id: 2.2V @ 40µAGateCharge(Qg)(Max)@Vgs: 75 nC @ 10 VVgs(Max): ±16VInputCapacitance(Ciss)(Max)@Vds: 5.68 pF @ 25 VFETFeature: -PowerDissipation(Max): 79W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO263-3-2IPB80N06S4L07ATMA1 | Infineon | NHE Electronics
IPB80N06S4L07ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
