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IPD079N06L3GBTMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 50A TO252-3
Product Attributes：
Part Number: IPD079N06L3GBTMA1
Manufacturer: Infineon
Description: MOSFET N-CH 60V 50A TO252-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPD079N06L3GBTMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPD079N06L3GBTMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 60V 50A TO252-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: Last Time BuyFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 50A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 7.9mOhm @ 50A, 10VVgs(th)(Max)@Id: 2.2V @ 34µAGateCharge(Qg)(Max)@Vgs: 29 nC @ 4.5 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 4900 pF @ 30 VFETFeature: -PowerDissipation(Max): 79W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO252-3IPD079N06L3GBTMA1 | Infineon | NHE Electronics
IPD079N06L3GBTMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
