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IPD096N08N3GBTMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 80V 73A TO252-3
Product Attributes：
Part Number: IPD096N08N3GBTMA1
Manufacturer: Infineon
Description: MOSFET N-CH 80V 73A TO252-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPD096N08N3GBTMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPD096N08N3GBTMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 80V 73A TO252-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: OptiMOS™PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 73A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 9.6mOhm @ 46A, 10VVgs(th)(Max)@Id: 3.5V @ 46µAGateCharge(Qg)(Max)@Vgs: 35 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2410 pF @ 40 VFETFeature: -PowerDissipation(Max): 100W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO252-3IPD096N08N3GBTMA1 | Infineon | NHE Electronics
IPD096N08N3GBTMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
