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IPD110N12N3GATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 120V 75A TO252-3
Product Attributes：
Part Number: IPD110N12N3GATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 120V 75A TO252-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPD110N12N3GATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPD110N12N3GATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 120V 75A TO252-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 120 VCurrent-ContinuousDrain(Id)@25°C: 75A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 11mOhm @ 75A, 10VVgs(th)(Max)@Id: 3V @ 83µA (Typ)GateCharge(Qg)(Max)@Vgs: 65 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 4310 pF @ 60 VFETFeature: -PowerDissipation(Max): 136W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO252-3IPD110N12N3GATMA1 | Infineon | NHE Electronics
IPD110N12N3GATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
