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IPD26N06S2L35ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 55V 30A TO252-3
IPD26N06S2L35ATMA1 Images
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Product Specifications:
MfrPart.: IPD26N06S2L35ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 55V 30A TO252-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: OptiMOS™PartStatus: Discontinued at FETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 55 VCurrent-ContinuousDrain(Id)@25°C: 30A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 35mOhm @ 13A, 10VVgs(th)(Max)@Id: 2V @ 26µAGateCharge(Qg)(Max)@Vgs: 24 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 621 pF @ 25 VFETFeature: -PowerDissipation(Max): 68W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO252-3-11IPD26N06S2L35ATMA1 | Infineon | NHE Electronics
IPD26N06S2L35ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.