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IPD30N06S2L23ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 55V 30A TO252-3
IPD30N06S2L23ATMA1 Images
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Product Specifications：
MfrPart.: IPD30N06S2L23ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 55V 30A TO252-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: Discontinued at FETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 55 VCurrent-ContinuousDrain(Id)@25°C: 30A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 23mOhm @ 22A, 10VVgs(th)(Max)@Id: 2V @ 50µAGateCharge(Qg)(Max)@Vgs: 42 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1091 pF @ 25 VFETFeature: -PowerDissipation(Max): 100W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO252-3-11IPD30N06S2L23ATMA1 | Infineon | NHE Electronics
IPD30N06S2L23ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
