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IPD35N10S3L26ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 35A TO252-31
IPD35N10S3L26ATMA1 Images
Product Attributes：
Part Number: IPD35N10S3L26ATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 100V 35A TO252-31
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPD35N10S3L26ATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPD35N10S3L26ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 100V 35A TO252-31Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: OptiMOS™PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 35A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 24mOhm @ 35A, 10VVgs(th)(Max)@Id: 2.4V @ 39µAGateCharge(Qg)(Max)@Vgs: 39 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2700 pF @ 25 VFETFeature: -PowerDissipation(Max): 71W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO252-3-11IPD35N10S3L26ATMA1 | Infineon | NHE Electronics
IPD35N10S3L26ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
