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IPD50R650CEATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 500V 6.1A TO252-3
Product Attributes：
Part Number: IPD50R650CEATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 500V 6.1A TO252-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPD50R650CEATMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPD50R650CEATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 500V 6.1A TO252-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: CoolMOS™ CEPartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 500 VCurrent-ContinuousDrain(Id)@25°C: 6.1A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 13VRdsOn(Max)@IdVgs: 650mOhm @ 1.8A, 13VVgs(th)(Max)@Id: 3.5V @ 150µAGateCharge(Qg)(Max)@Vgs: 15 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 342 pF @ 100 VFETFeature: -PowerDissipation(Max): 69W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO252-3IPD50R650CEATMA1 | Infineon | NHE Electronics
IPD50R650CEATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
