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IPD65R190C7ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 650V 13A TO252-3
Product Attributes:
Part Number: IPD65R190C7ATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 650V 13A TO252-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPD65R190C7ATMA1 Datasheet (PDF)
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MOSFET N-CH 650V 7A TO252-3
Product Specifications:
MfrPart.: IPD65R190C7ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 650V 13A TO252-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: CoolMOS™ C7PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 650 VCurrent-ContinuousDrain(Id)@25°C: 13A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 190mOhm @ 5.7A, 10VVgs(th)(Max)@Id: 4V @ 290µAGateCharge(Qg)(Max)@Vgs: 23 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1150 pF @ 400 VFETFeature: -PowerDissipation(Max): 72W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO252-3IPD65R190C7ATMA1 | Infineon | NHE Electronics
IPD65R190C7ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.