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IPD65R1K4CFDBTMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 650V 2.8A TO252-3
Product Attributes：
Part Number: IPD65R1K4CFDBTMA1
Manufacturer: Infineon
Description: MOSFET N-CH 650V 2.8A TO252-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPD65R1K4CFDBTMA1 Datasheet (PDF)
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Product Specifications：
MfrPart.: IPD65R1K4CFDBTMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 650V 2.8A TO252-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: CoolMOS™PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 650 VCurrent-ContinuousDrain(Id)@25°C: 2.8A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 1.4Ohm @ 1A, 10VVgs(th)(Max)@Id: 4.5V @ 100µAGateCharge(Qg)(Max)@Vgs: 10 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 262 pF @ 100 VFETFeature: -PowerDissipation(Max): 28.4W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO252-3IPD65R1K4CFDBTMA1 | Infineon | NHE Electronics
IPD65R1K4CFDBTMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.
