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IPD65R600E6ATMA1, Infineon, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 650V 7.3A TO252-3
Product Attributes:
Part Number: IPD65R600E6ATMA1
Manufacturer: Infineon
Description: MOSFET N-CH 650V 7.3A TO252-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
IPD65R600E6ATMA1 Datasheet (PDF)
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Product Specifications:
MfrPart.: IPD65R600E6ATMA1Mfr: Infineon TechnologiesDescription: MOSFET N-CH 650V 7.3A TO252-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: CoolMOS™ E6PartStatus: Not For New DesignsFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 650 VCurrent-ContinuousDrain(Id)@25°C: 7.3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 600mOhm @ 2.1A, 10VVgs(th)(Max)@Id: 3.5V @ 210µAGateCharge(Qg)(Max)@Vgs: 23 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 440 pF @ 100 VFETFeature: -PowerDissipation(Max): 63W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PG-TO252-3IPD65R600E6ATMA1 | Infineon | NHE Electronics
IPD65R600E6ATMA1 were obtained directly from authorized Infineon distributors and other trusted sources throughout the world.